Abstract

Abstract:Thepresent article reports about synthesis of copper indium di-selenide (CuInSe₂)thin films by large area depositing, user friendly and cost effective solutiongrowth technique at room temperature on glass substrate. These as depositedthin films are characterized for physicochemical as well as optoelectronicproperties using X-ray diffraction (XRD), energy dispersive X-ray spectrumanalysis (EDAX), scanning electron microscopy (SEM), UV-Vis absorption spectraand I-V studies under dark and illumination conditions. From XRD pattern (112),(220) and (312) planes are obtained confirming the CuInSe₂ phaseformation, the elemental composition is confirmed from the observed elementalproportion in EDAX spectra. Uneven distribution of granular, spherical, hazyparticulates is observed in SEM images. The UV-Vis absorption spectrum shows anabsorption peak centered at approximately 380 nm confirming the exciton inducedcharge transfer process. Electrical properties measured from the I-V responseshows semiconducting behavior of CuInSe₂ films with an averagecharge mobility of around 260 cm² Vs⁻¹.

Keywords – CuInSe₂ thin film, Physicochemical and optoelectronicproperties, Exciton induced charge transfer.